MUN(2,5)114, MMUN2114L, DTA114Yxx, NSBA114YF3 دیتاشیت

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مشاهده دیتاشیت MUN(2,5)114, MMUN2114L, DTA114Yxx, NSBA114YF3	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: onsemi NSVDTA114YM3T5G
Transistor Type: One PNP - Pre-Biased
Collector Current (Ic): 100mA
Power Dissipation (Pd): 260mW
DC Current Gain (hFE@Ic,Vce): 80@5mA,10V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,300uA
Package: SOT-723
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Part Number: NSVDTA114
detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723